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| Advance Technical Information High Current MegaMOSTMFET N-Channel Enhancement Mode IXTK 250N10 VDSS ID25 RDS(on) = 100 V = 250 A = 5 m Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1.0 M Continuous Transient TC = 25C MOSFET chip capability External lead current limit TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C Maximum ratings 100 100 20 30 250 75 1000 90 80 4.0 5 730 -55 ... +150 150 -55 ... +150 V V V V A A A A mJ J V/ns W C C C C Nm/lb.in. g G D S TO-264 AA (IXTK) D (TAB) G = Gate S = Source D = Drain Tab = Drain 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 300 0.7/6 10 Features *Low RDS (on) HDMOSTM process *Rugged polysilicon gate cell structure *International standard package *Fast switching times Applications * Motor controls * DC choppers * Switched-mode power supplies *DC-DC Converters *Linear Regulators Advantages * Easy to mount with one screw (isolated mounting screw hole) * Space savings * High power density Symbol Test Conditions (TJ = 25C unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1 mA V DS = VGS, ID = 250 A V GS = 20 V DC, VDS = 0 V DS = VDSS VGS = 0 V TJ = 25C TJ = 125C Characteristic Values Min. Typ. Max. 100 2.0 4.0 200 50 1 V V nA A mA VGS = 10 V, ID = 90 A Pulse test, t 300 ms, duty cycle d 2% 5 m (c) 2003 IXYS All rights reserved DS99022(03/03) IXTK 250N10 Symbol Test Conditions (T J = 25C unless otherwise specified) gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK 0.15 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 VGS = 10 V, VDS = 0.5 VDSS, ID = 90 A RG = 1.0 (External) VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 10 V; ID = 90 A, pulse test Characteristic values Min. Typ. Max. 75 110 7800 3200 1300 35 40 120 55 390 60 180 S pF pF pF ns ns ns ns nC nC nC 0.17 K/W K/W Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. TO-264 AA Outline .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 Source-Drain Diode Symbol IS ISM VSD t rr Qrr Test Conditions VGS = 0V Ratings and Characteristics (TJ = 25C unless otherwise specified) Min. Typ. Max. 250 1000 1.2 A A V Repetitive; pulse width limited by TJM IF = 90 A, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 30A, -di/dt = 100 A/s, VR = 50 V 150 2 ns C IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 |
Price & Availability of IXTK250N10
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